No | Part number | Description ( Function ) | Manufacturers | |
1 | CEM4600 | Dual Enhancement Mode Field Effect Transistor CEM4600 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 30V, 7.3A, RDS(ON) = 18mΩ (typ) @VGS = 10V. RDS(ON) = 26mΩ (typ) @VGS = 4.5V. -30V, -4.6A, RDS(ON) = 45mΩ (typ) @VGS = -10V. RDS(ON) = 72mΩ (typ) @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. |
Chino-Excel Technology |
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