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CEM3259 PDF Datasheet

The CEM3259 is Dual Enhancement Mode Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 CEM3259
Dual Enhancement Mode Field Effect Transistor

Dual Enhancement Mode Field Effect Transistor (N and P Channel) CEM3259 5 FEATURES 30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V. -30V, -5.9A, RDS(ON) = 36mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package

CET
CET
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CEM3252 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.5A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D 7 D 6 D 5 5 Lead free product is acqu

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CEM3252L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 8A, RDS(ON) = 29mΩ @VGS = 10V. RDS(ON) = 36mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free pro

Chino-Excel Technology
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