No | Part number | Description ( Function ) | Manufacturers | |
1 | CEM3259 | Dual Enhancement Mode Field Effect Transistor Dual Enhancement Mode Field Effect Transistor (N and P Channel) CEM3259 5 FEATURES 30V, 7.6A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V. -30V, -5.9A, RDS(ON) = 36mΩ @VGS = -10V. RDS(ON) = 52mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package |
CET |
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BA3259HFP | Dual-Output (Fixed/Variable) LDO Regulators Datasheet Dual-Output (Fixed/Variable) LDO Regulators BA3259HFP BA30E00WHFP ●General Description The BA3259HFP and BA30E00WHFP are 2-output, low-saturation regulators. These units have both a 3.3 V fixed output as well as a variable output with a voltage accuracy of ±2%, and |
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CEM3252 | N-Channel Enhancement Mode Field Effect Transistor CEM3252 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 7.5A, RDS(ON) = 28mΩ @VGS = 10V. RDS(ON) = 40mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D D 7 D 6 D 5 5 Lead free product is acqu |
CET |
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CEM3252L | N-Channel Enhancement Mode Field Effect Transistor CEM3252L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 8A, RDS(ON) = 29mΩ @VGS = 10V. RDS(ON) = 36mΩ @VGS = 4.5V. RDS(ON) = 55mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free pro |
Chino-Excel Technology |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |