No | Part number | Description ( Function ) | Manufacturers | |
1 | CEM3138 | Dual N-Channel Enhancement Mode Field Effect Transistor Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 9.1A, RDS(ON) = 15mΩ @VGS = 10V. RDS(ON) = 21mΩ @VGS = 4.5V. 30V, 6.9A, RDS(ON) = 26mΩ @VGS = 10V. RDS(ON) = 35mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. SO-8 1 1 S1 2 G1 D1 8 |
CET |
0  1  2  3  4  5  6  7  8 9 |
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Part No | Description ( Function) | Manufacturers | |
2SC3138 | Silicon NPN Triple Diffused Type TRANSISTOR TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 2SC3138 High Voltage Switching Applications Unit: mm • High voltage: VCBO = 200 V (max) VCEO = 200 V (max) • Small flat package • Complementary to 2SA1255 Absolute Maximum Ratings (Ta = 25°C) C |
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Kexin |
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C3138 | NPN Transistor - 2SC3138 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3138 2SC3138 High Voltage Switching Applications Unit: mm • High voltage: VCBO = 200 V (max) VCEO = 200 V (max) • Small flat package • Complementary to 2SA1255 Absolute Maximum Ratings (Ta = 25°C) C |
Toshiba |
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CA3138 | High-current / high-beta N-P-N transistor array w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c |
GE Solid State |
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CA3138A | High-current / high-beta N-P-N transistor array w w a D . w S a t e e h U 4 t m o .c w w w t a .D S a e h U 4 t e .c m o w w w .D a S a t e e h U 4 t m o .c |
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