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Datasheet CEM2401 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CEM2401   P-Channel Enhancement Mode Field Effect Transistor

www.DataSheet.co.kr P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -6A, RDS(ON) = 44mΩ @VGS = -4.5V. RDS(ON) = 65mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Pa
 CET
CET		 datasheet CEM2401 pdf

CEM2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CEM2539A

Dual Enhancement Mode Field Effect Transistor

Datasheet.es Dual Enhancement Mode Field Effect Transistor (N and P Channel) CEM2539A D1 D2 FEATURES 20V, 7.5A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. -20V, -4A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 100mΩ @VGS = -4.
 CET
CET		 datasheet pdf - CET
CEM2281

P-Channel Enhancement Mode Field Effect Transistor

CEM2281 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -7.2A, RDS(ON) = 30mΩ @VGS = -4.5V. RDS(ON) = 43mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is ac
 CET
CET		 datasheet pdf - CET
CEM2163

P-Channel Enhancement Mode Field Effect Transistor

CEM2163 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -8.9A, RDS(ON) = 20mΩ @VGS = -4.5V. RDS(ON) = 30mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surfac
 CET
CET		 datasheet pdf - CET


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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