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Datasheet CEM2108 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CEM2108   Dual N-Channel Enhancement Mode Field Effect Transistor

CEM2108 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 9.5A, RDS(ON) = 14mΩ @VGS = 4.5V. RDS(ON) = 20mΩ @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1
CET
CET		 datasheet CEM2108 pdf

CEM2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CEM2539A

Dual Enhancement Mode Field Effect Transistor

Datasheet.es Dual Enhancement Mode Field Effect Transistor (N and P Channel) CEM2539A D1 D2 FEATURES 20V, 7.5A, RDS(ON) = 22mΩ @VGS = 10V. RDS(ON) = 25mΩ @VGS = 4.5V. RDS(ON) = 40mΩ @VGS = 2.5V. -20V, -4A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 100mΩ @VGS = -4.
 CET
CET		 datasheet pdf - CET
CEM2281

P-Channel Enhancement Mode Field Effect Transistor

CEM2281 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -20V, -7.2A, RDS(ON) = 30mΩ @VGS = -4.5V. RDS(ON) = 43mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is ac
 CET
CET		 datasheet pdf - CET
CEM2163

P-Channel Enhancement Mode Field Effect Transistor

CEM2163 P-Channel Enhancement Mode Field Effect Transistor FEATURES -20V, -8.9A, RDS(ON) = 20mΩ @VGS = -4.5V. RDS(ON) = 30mΩ @VGS = -2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surfac
 CET
CET		 datasheet pdf - CET


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
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