Datasheet CEJ8218 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CEJ8218	Dual N-Channel Enhancement Mode Field Effect Transistor www.DataSheet.co.kr Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.5A, RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. S1 *Typical v	CET

CEJ8 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CEJ8218	Dual N-Channel Enhancement Mode Field Effect Transistor Datasheet.es Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.5A, RDS(ON) = 23mΩ @VGS = 4.5V. RDS(ON) = 34mΩ @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acq	CET

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Número de pieza	Descripción	Fabricantes	PDF
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