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Datasheet CEI10N4 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | CEI10N4 | N-Channel Enhancement Mode Field Effect Transistor CEP10N4/CEB10N4 CEI10N4/CEF10N4
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP10N4 CEB10N4 CEI10N4 CEF10N4 VDSS 450V 450V 450V 450V RDS(ON) 0.7Ω 0.7Ω 0.7Ω 0.7Ω ID 10A 10A 10A 10A e @VGS 10V 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON). High powe |  CET | transistor |
CEI Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | CEI01N6 | N-Channel Enhancement Mode Field Effect Transistor CEP01N6/CEB01N6 CEI01N6/CEF01N6
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP01N6 CEB01N6 CEI01N6 CEF01N6 VDSS 650V 650V 650V 650V RDS(ON) 15Ω 15Ω 15Ω 15Ω ID 1A 1A 1A 1A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and cur CET transistor | | |
| 2 | CEI02N6 | N-Channel Enhancement Mode Field Effect Transistor CEP02N6/CEB02N6 CEI02N6/CEF02N6
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP02N6 CEB02N6 CEI02N6 CEF02N6 VDSS 600V 600V 600V 600V RDS(ON) 5Ω 5Ω 5Ω 5Ω ID 2A 2A 2A 2A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current CET transistor | | |
| 3 | CEI02N6A | N-Channel Enhancement Mode Field Effect Transistor CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP02N6A CEB02N6A CEI02N6A CEF02N6A VDSS 650V 650V 650V 650V RDS(ON) 7.5Ω 7.5Ω 7.5Ω 7.5Ω ID 1.5A 1.5A 1.5A 1.5A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON) CET transistor | | |
| 4 | CEI02N7 | N-Channel Enhancement Mode Field Effect Transistor CEP02N7/CEB02N7 CEI02N7/CEF02N7
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP02N7 CEB02N7 CEI02N7 CEF02N7 VDSS 700V 700V 700V 700V RDS(ON) 6.6Ω 6.6Ω 6.6Ω 6.6Ω ID 1.9A 1.9A 1.9A 1.9A e @VGS 10V 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON). High CET transistor | | |
| 5 | CEI04N7 | N-Channel Enhancement Mode Field Effect Transistor CEP04N7/CEB04N7 CEI04N7/CEF04N7
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP04N7 CEB04N7 CEI04N7 CEF04N7 VDSS 700V 700V 700V 700V RDS(ON) 3.5Ω 3.5Ω 3.5Ω 3.5Ω ID 4A 4A 4A 4A d @VGS 10V 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON). High power an CET transistor | | |
| 6 | CEI09N6 | N-Channel Enhancement Mode Field Effect Transistor CEP09N6/CEB09N6 CEI09N6/CEF09N6
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP09N6 CEB09N6 CEI09N6 CEF09N6 VDSS 600V 600V 600V 600V RDS(ON) 1.2Ω 1.2Ω 1.2Ω 1.2Ω ID 9A 9A 9A 9A e @VGS 10V 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON). High power an CET transistor | | |
| 7 | CEI10N4 | N-Channel Enhancement Mode Field Effect Transistor CEP10N4/CEB10N4 CEI10N4/CEF10N4
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP10N4 CEB10N4 CEI10N4 CEF10N4 VDSS 450V 450V 450V 450V RDS(ON) 0.7Ω 0.7Ω 0.7Ω 0.7Ω ID 10A 10A 10A 10A e @VGS 10V 10V 10V 10V D
Super high dense cell design for extremely low RDS(ON). High powe CET transistor | |
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