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Datasheet CEH2331 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CEH2331 | P-Channel Enhancement Mode Field Effect Transistor P-Channel Enhancement Mode Field Effect Transistor FEATURES
-20V, -5.2A , RDS(ON) = 48mΩ @VGS = -4.5V. RDS(ON) = 60mΩ @VGS = -2.5V. RDS(ON) = 78mΩ @VGS = -1.8V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. TSOP-6 package. 6 5 4 G(3) 1 TS |
Chino-Excel Technology |
CEH2 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CEH2608 | Dual Enhancement Mode Field Effect Transistor |
CET |
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CEH2331 | P-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
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CEH2321 | P-Channel Enhancement Mode Field Effect Transistor |
CET |
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Número de pieza | Descripción | Fabricantes | |
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