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Datasheet CEFB205-G Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | CEFB205-G | SMD Efficient Fast Recovery Rectifier
SMD Efficient Fast Recovery Rectifier
CEFB201-G Thru CEFB205-G (RoHS Device)
Reverse Voltage: 50 ~ 600 Volts Forward Current: 2.0 Amp Features:
Ideal for surface mount applications Easy pick and place Plastic package has Underwriters Lab. flammability classification 94V-0. Super | Comchip Technology | rectifier |
CEF Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | CEF01N6 | N-Channel Enhancement Mode Field Effect Transistor CEP01N6/CEB01N6 CEI01N6/CEF01N6
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP01N6 CEB01N6 CEI01N6 CEF01N6 VDSS 650V 650V 650V 650V RDS(ON) 15Ω 15Ω 15Ω 15Ω ID 1A 1A 1A 1A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and cur CET transistor | | |
2 | CEF01N65 | N-Channel Enhancement Mode Field Effect Transistor CEP01N65/CEB01N65
CEF01N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type CEP01N65 CEB01N65 CEF01N65
VDSS 650V 650V
650V
RDS(ON) 10.5Ω 10.5Ω
10.5Ω
ID 1.3A 1.3A 1.3A d
@VGS 10V 10V
10V
Super high dense cell design for extremely low RDS(ON). High power and CET transistor | | |
3 | CEF01N6G | N-Channel Enhancement Mode Field Effect Transistor CEP01N6G/CEB01N6G CEF01N6G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP01N6G CEB01N6G CEF01N6G
VDSS 600V 600V
600V
RDS(ON) 9.3Ω 9.3Ω
9.3Ω
ID @VGS 1A 10V 1A 10V 1A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing capabili CET transistor | | |
4 | CEF02N6 | N-Channel Logic Level Enhancement Mode Field Effect Transistor CEF02N6
Sep. 2002
N-Channel Logic Level Enhancement Mode Field Effect Transistor
FEATURES
600V , 1.5A , RDS(ON)=5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole
D
6
G
G D S
S
TO-220F
ABSOLUTE M CET transistor | | |
5 | CEF02N65A | N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP02N65A CEB02N65A CEF02N65A VDSS 650V 650V 650V RDS(ON) 10.5Ω 10.5Ω 10.5Ω ID 1.3A 1.3A 1.3A d @VGS 10V 10V 10V
CEP02N65A/CEB02N65A CEF02N65A
PRELIMINARY
Super high dense cell design for extremely low RDS(ON). High power and c CET transistor | | |
6 | CEF02N65G | N-Channel Enhancement Mode Field Effect Transistor CEP02N65G/CEB02N65G CEF02N65G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type CEP02N65G CEB02N65G CEF02N65G
VDSS 650V 650V
650V
RDS(ON) 5.5Ω 5.5Ω
5.5Ω
ID @VGS 2A 10V 2A 10V 2A d 10V
Super high dense cell design for extremely low RDS(ON). High power and current handing ca CET transistor | | |
7 | CEF02N6A | N-Channel Enhancement Mode Field Effect Transistor CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A
N-Channel Enhancement Mode Field Effect Transistor FEATURES
Type CEP02N6A CEB02N6A CEI02N6A CEF02N6A VDSS 650V 650V 650V 650V RDS(ON) 7.5Ω 7.5Ω 7.5Ω 7.5Ω ID 1.5A 1.5A 1.5A 1.5A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON) CET transistor | |
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Número de pieza | Descripción | Fabricantes | |
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