No | Part number | Description ( Function ) | Manufacturers | |
2 | CEF04N6 | N-Channel Logic Level Enhancement Mode Field Effect Transistor CEF04N6 Feb. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 600V , 2.5A , RDS(ON)=2.5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole D G G D S S TO-220F ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage |
Chino-Excel Technology |
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1 | CEF04N65 | N-Channel Enhancement Mode Field Effect Transistor CEP04N65/CEB04N65 CEF04N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP04N65 CEB04N65 CEF04N65 VDSS 650V RDS(ON) 2.8Ω ID 4A @VGS 10V 650V 2.8Ω 4A 10V 650V 2.8Ω 4A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIE |
CET |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |