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CEF04N6 PDF Datasheet

The CEF04N6 is N-channel LogIC Level Enhancement Mode Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
2 CEF04N6
N-Channel Logic Level Enhancement Mode Field Effect Transistor

CEF04N6 Feb. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 600V , 2.5A , RDS(ON)=2.5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220F full-pak for through hole D G G D S S TO-220F ABSOLUTE MAXIMUM RATINGS (Tc=25 C unless otherwise noted) Parameter Drain-Source Voltage

Chino-Excel Technology
Chino-Excel Technology
pdf
1 CEF04N65
N-Channel Enhancement Mode Field Effect Transistor

CEP04N65/CEB04N65 CEF04N65 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP04N65 CEB04N65 CEF04N65 VDSS 650V RDS(ON) 2.8Ω ID 4A @VGS 10V 650V 2.8Ω 4A 10V 650V 2.8Ω 4A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D DG GS CEB SERIE

CET
CET
pdf

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