Datasheet CEE02N6G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	CEE02N6G	N-Channel Enhancement Mode Field Effect Transistor CEE02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-126 package. D G CEE SERIES TO-126 S ABSOLUTE	CET

CEE02 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
CEE02N6G	N-Channel Enhancement Mode Field Effect Transistor CEE02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-126 package. D G CEE SERIES	CET
CEE02N6A	N-Channel Enhancement Mode Field Effect Transistor CEE02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES 600V, 1.3A, RDS(ON) = 8.5Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-126 package. D G D S CEE SER	CET

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Número de pieza	Descripción	Fabricantes	PDF
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