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Datasheet CEE02N6G Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | CEE02N6G | N-Channel Enhancement Mode Field Effect Transistor CEE02N6G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
600V, 2.0A, RDS(ON) = 5.0Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-126 package.
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CEE SERIES TO-126
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CEE02 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
CEE02N6G | N-Channel Enhancement Mode Field Effect Transistor |
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CEE02N6A | N-Channel Enhancement Mode Field Effect Transistor |
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Número de pieza | Descripción | Fabricantes | |
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