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CED6060N PDF Datasheet

The CED6060N is N-channel Enhancement Mode Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 CED6060N
N-Channel Enhancement Mode Field Effect Transistor

CED6060N/CEU6060N N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 34A, RDS(ON) = 25mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. D D G S CEU SERIES TO-252(D-PAK) G DS CED SERIES TO-251(I-PAK) G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C

CET
CET
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CED6060R   N-Channel Logic Level Enhancement Mode Field Effect Transistor

CED6060R/CEU6060R Feb. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 6 60V , 30A , RDS(ON)=25m Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-251 & TO-252 package. D G S G D S D

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1N6036-1N6072A High-reliability discrete products and engineering services since 1977 TRANSIENT VOLTAGE SUPPRESSOR DIODES FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as no

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