No | Part number | Description ( Function ) | Manufacturers | |
1 | CED1012L | N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 10A, RDS(ON) = 120mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED1012L/CEU1012L D D G S CEU SERIES TO-252(D-PAK) G D G S CED SERIES TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Paramete |
CET |
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Part No | Description ( Function) | Manufacturers | |
CED1012 | N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES 120V, 10A, RDS(ON) = 120mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. CED1012/CEU1012 D D G |
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