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Datasheet CED04N6 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | CED04N6 | N-Channel Enhancement Mode Field Effect Transistor CED04N6/CEU04N6
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
600V, 3.4A, RDS(ON) = 2.4Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package.
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| 1 | CED04N65 | N-Channel Enhancement Mode Field Effect Transistor CED04N65/CEU04N65
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
650V, 3.2A, RDS(ON) = 2.8Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-251 & TO-252 package.
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