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Datasheet CEB75N06 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | CEB75N06 | N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Field Effect Transistor FEATURES
60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
CEP75N06/CEB75N06
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| 1 | CEB75N06G | N-Channel Enhancement Mode Field Effect Transistor CEP75N06G/CEB75N06G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 75A, RDS(ON) = 13mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 package.
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