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Datasheet CEB12N5 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 CEB12N5   N-Channel Enhancement Mode Field Effect Transistor

CEP12N5/CEB12N5 CEF12N5 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type CEP12N5 CEB12N5 CEF12N5 VDSS 500V 500V 500V RDS(ON) 0.54Ω 0.54Ω 0.54Ω ID 12A 12A 12A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current
CET
CET		 datasheet CEB12N5 pdf

CEB1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
CEB13N07

N-Channel Enhancement Mode Field Effect Transistor

CEP13N07/CEB13N07 N-Channel Enhancement Mode Field Effect Transistor FEATURES 70V, 13A, RDS(ON) = 125mΩ @VGS = 10V. RDS(ON) = 150mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-
 CET
CET		 datasheet pdf - CET
CEB14G04

N-Channel Enhancement Mode Field Effect Transistor

CEP14G04/CEB14G04 N-Channel Enhancement Mode Field Effect Transistor FEATURES 40V, 140A, RDS(ON) = 3.6mΩ @VGS = 10V. RDS(ON) = 6.5mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
 CET
CET		 datasheet pdf - CET
CEB1195

N-Channel Enhancement Mode Field Effect Transistor

CEP1195/CEB1195 CEF1195 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP1195 CEB1195 CEF1195 VDSS 900V RDS(ON) 2.75Ω ID 5A @VGS 10V 900V 2.75Ω 5A 10V 900V 2.75Ω 5A d 10V Super high dense cell design for extremely low RDS(ON). High power and cu
 CET
CET		 datasheet pdf - CET


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

 Sanken
Sanken		 PDF


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