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CEB02N6 PDF Datasheet

The CEB02N6 is N-channel LogIC Level Enhancement Mode Field Effect Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
5 CEB02N6
N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

CEP02N6/CEB02N6 4 ELECTRICAL CHARACTERISTICS (TC=25 C unless otherwise noted) Parameter DYNAMIC CHARACTERISTICS b Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage CISS COSS CRSS a Symbol Condition Min Typ Max Unit 250 50 30 1.5 PF PF PF VDS =25V, VGS = 0V f =1.0MHZ 4 VGS = 0V, Is =2A DRAIN-SOURCE DIODE CHARACTERISTICS VSD V Notes

CET
CET
pdf
4 CEB02N65A
N-Channel Enhancement Mode Field Effect Transistor

N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N65A CEB02N65A CEF02N65A VDSS 650V 650V 650V RDS(ON) 10.5Ω 10.5Ω 10.5Ω ID 1.3A 1.3A 1.3A d @VGS 10V 10V 10V CEP02N65A/CEB02N65A CEF02N65A PRELIMINARY Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D D G G D S G CEP S

CET
CET
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3 CEB02N65G
N-Channel Enhancement Mode Field Effect Transistor

CEP02N65G/CEB02N65G CEF02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N65G CEB02N65G CEF02N65G VDSS 650V 650V 650V RDS(ON) 5.5Ω 5.5Ω 5.5Ω ID @VGS 2A 10V 2A 10V 2A d 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G

CET
CET
pdf
2 CEB02N6A
N-Channel Enhancement Mode Field Effect Transistor

CEP02N6A/CEB02N6A CEI02N6A/CEF02N6A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N6A CEB02N6A CEI02N6A CEF02N6A VDSS 650V 650V 650V 650V RDS(ON) 7.5Ω 7.5Ω 7.5Ω 7.5Ω ID 1.5A 1.5A 1.5A 1.5A e @VGS 10V 10V 10V 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-2

CET
CET
pdf
1 CEB02N6G
N-Channel Enhancement Mode Field Effect Transistor

CEP02N6G/CEB02N6G CEF02N6G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP02N6G CEB02N6G CEF02N6G VDSS 600V 600V 600V RDS(ON) 5Ω 5Ω 5Ω ID 2.2A 2.2A 2.2A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG GS CEB SERIES TO-263(DD-PAK) G D S

CET
CET
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[1]    

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Vishay Semiconductor
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