No | Part number | Description ( Function ) | Manufacturers | |
1 | CEA3252 | N-Channel Enhancement Mode Field Effect Transistor CEA3252 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 5A, RDS(ON) = 32mΩ @VGS = 10V. RDS(ON) = 45mΩ @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package. D D SOT-89 S D G G S ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit |
CET |
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Recommended search results related to CEA3252 |
Part No | Description ( Function) | Manufacturers | |
1N3252 | Diode 300V 275A 2-Pin DO-9 |
New Jersey Semiconductor |
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2N3252 | Bipolar NPN Device 2N3252 Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. (00.0.8395)max. 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200) typ. 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 2 13 45° 2.54 (0.100) 1 |
Seme LAB |
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2N3252 | NPN Transistor OEM: Texas Instruments 2N3252 Data Sheet www.semicon-data.com OEM: Texas Instruments 2N3252 Data Sheet www.semicon-data.com OEM: Texas Instruments 2N3252 Data Sheet www.semicon-data.com OEM: Texas Instruments 2N3252 Data Sheet www.semicon-data.com |
Texas |
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2N3252 | NPN SILICON TRANSITOR PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (772)283-4500 FAX: (772)286-8914 Website: http://www.semi-tech-inc.com Email: [email protected] CASE OUTLINE: TO-205AD (TO-39) NPN SILICON TRANSITOR TYPE: 2N3252 ABSOLUTE |
SEMICONDUCTOR TECHNOLOGY |
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2N3252 | GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Total Device Dissipation @ Ta = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol 2N3252 2N3253 2I |
Motorola Semiconductors |
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