No | Part number | Description ( Function ) | Manufacturers | |
1 | CDRH40D18ANP-2R2NC | (CDRH40D18/A) SMD Power Inductor SMD Power Inductor CDRH40D18/A Description • Ferrite drum core construction. • Magnetically shielded. • L W H: 4.5 4.5 2.0 mm Max. • Product weight: 0.1g(Ref.) • Moisture Sensitivity Level: 1 • RoHS compliance. • Qualification to AEC-Q200. RoHS × × × × Dimension - [mm] 3.8±0.3 4.2±0.3 ) 0 . 2 ( ) 2 . 2 ( Max.2.0(Typ.1.8) 端子CUT部 1.2±0.3 Environmen |
Sumida |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to CDRH40D18ANP-2R2NC |
Part No | Description ( Function) | Manufacturers | |
K7P401822B-HC16 | 128Kx36 & 256Kx18 Synchronous Pipelined SRAM K7P403622M K7P401822M Document Title 128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128Kx36 & 256Kx18 SRAM Revision History Rev. No. Rev. 0.0 Rev. 0.1 History - Preliminary specification release - Change specification format. No change was made in parameters. - Updated I DD, ISB |
Samsung semiconductor |
|
K7P401822B-HC20 | 128Kx36 & 256Kx18 Synchronous Pipelined SRAM K7P403622M K7P401822M Document Title 128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128Kx36 & 256Kx18 SRAM Revision History Rev. No. Rev. 0.0 Rev. 0.1 History - Preliminary specification release - Change specification format. No change was made in parameters. - Updated I DD, ISB |
Samsung semiconductor |
|
K7P401822B-HC25 | 128Kx36 & 256Kx18 Synchronous Pipelined SRAM K7P403622M K7P401822M Document Title 128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128Kx36 & 256Kx18 SRAM Revision History Rev. No. Rev. 0.0 Rev. 0.1 History - Preliminary specification release - Change specification format. No change was made in parameters. - Updated I DD, ISB |
Samsung semiconductor |
|
K7P401822M-H16 | 128Kx36 & 256Kx18 Synchronous Pipelined SRAM K7P403622M K7P401822M Document Title 128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128Kx36 & 256Kx18 SRAM Revision History Rev. No. Rev. 0.0 Rev. 0.1 History - Preliminary specification release - Change specification format. No change was made in parameters. - Updated I DD, ISB |
Samsung semiconductor |
|
K7P401822M-H19 | 128Kx36 & 256Kx18 Synchronous Pipelined SRAM K7P403622M K7P401822M Document Title 128Kx36 & 256Kx18 Synchronous Pipelined SRAM 128Kx36 & 256Kx18 SRAM Revision History Rev. No. Rev. 0.0 Rev. 0.1 History - Preliminary specification release - Change specification format. No change was made in parameters. - Updated I DD, ISB |
Samsung semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |