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CDBD8060-HF PDF Datasheet

The CDBD8060-HF is (cdbd8060-hf / Cdbd8100-hf) Chip Schottky Barrier Rectifier. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 CDBD8060-HF
(CDBD8060-HF / CDBD8100-HF) Chip Schottky Barrier Rectifier

Chip Schottky Barrier Rectifier CDBD8060-HF Thru. CDBD8100-HF Reverse Voltage: 60 to 100 Volts Forward Current: 8.0 Amp RoHS Device Halogen Free Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. 0.059(1.50) 0.031(0.80) 0.413(10.50) 0.394(10.00) D2PAK -Low profile surface mounted application in order to o

Comchip Technology
Comchip Technology
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Part No Description ( Function) Manufacturers PDF
CDBD8060-G   (CDBD8060-G / CDBD8100-G) Chip Schottky Barrier Rectifier

Chip Schottky Barrier Rectifier Comchip SMD Diode Specialist CDBD8060-G Thru. CDBD8100-G Reverse Voltage: 60 to 100 Volts Forward Current: 8.0 Amp RoHS Device Features -Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistanc

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ADC08060   8-Bit/ 20 MSPS to 60 MSPS/ 1.3 mW/MSPS A/D Converter

ADC08060 8-Bit, 60 MSPS, 1.3 mW/MSPS A/D Converter January 2003 ADC08060 8-Bit, 20 MSPS to 60 MSPS, 1.3 mW/MSPS A/D Converter General Description The ADC08060 is a low-power, 8-bit, monolithic analog-todigital converter with an on-chip track-and-hold circuit. Optimized for low

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ADC08060 8-Bit, 60 MSPS, 1.3 mW/MSPS A/D Converter January 2003 ADC08060 8-Bit, 20 MSPS to 60 MSPS, 1.3 mW/MSPS A/D Converter General Description The ADC08060 is a low-power, 8-bit, monolithic analog-todigital converter with an on-chip track-and-hold circuit. Optimized for low

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AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system fo

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[1]    

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