No | Part number | Description ( Function ) | Manufacturers | |
1 | CBR35A060P | Diode ( Rectifier ) |
American Microsemiconductor |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to CBR35A060P |
Part No | Description ( Function) | Manufacturers | |
CBR35A060 | Diode ( Rectifier ) |
American Microsemiconductor |
|
CGH35060F1 | GaN HEMT CGH35060F1 / CGH35060P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes |
Cree |
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CGH35060P1 | GaN HEMT CGH35060F1 / CGH35060P1 60 W, 3.3-3.6 GHz, 28V, GaN HEMT for WiMAX, Broadband Wireless Access Cree’s CGH35060F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes |
Cree |
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CGHV35060MP | GaN HEMT PRELIMINARY CGHV35060MP 60W, 2700-3500 MHz, 50V, GaN HEMT for S Band Radar and LTE base stations Cree’s CGHV35060MP is a 60W input matched, gallium nitride (GaN) high electron mobility transistor (HEMT) optimized for S Band performance. The CGHV35060MP is suitable for |
Cree |
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M35060 | SCREEN CHARACTER and PATTERN DISPLAY CONTROLLERS |
Mitsubishi |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |