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CA3080E PDF Datasheet

The CA3080E is Operational Amplifier. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 CA3080E
OPERATIONAL AMPLIFIER

CA3080E IL08 OPERATIONAL AMPLIFIER —TOP VIEW— NC 1 2 3 VEE 4 _ + 8 NC 7 VCC 6 5 BIAS

ETC
ETC
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Recommended search results related to CA3080E

Part No Description ( Function) Manufacturers PDF
CA3080   2MHz / Operational Transconductance Amplifier

CA3080, CA3080A Data Sheet September 1998 File Number 475.4 2MHz, Operational Transconductance Amplifier (OTA) The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductanceamplifier (OTA) concept described in Application Note AN6668

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CA3080   Operational Transconductance Amplifier

S E M I C O N D U C T O R CA3080, CA3080A 2MHz, Operational Transconductance Amplifier (OTA) Description The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductanceamplifier (OTA) concept described in Application Note AN6668, “A

Harris Semiconductor
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CA3080A   2MHz / Operational Transconductance Amplifier

CA3080, CA3080A Data Sheet September 1998 File Number 475.4 2MHz, Operational Transconductance Amplifier (OTA) The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductanceamplifier (OTA) concept described in Application Note AN6668

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CA3080A   Operational Transconductance Amplifier

S E M I C O N D U C T O R CA3080, CA3080A 2MHz, Operational Transconductance Amplifier (OTA) Description The CA3080 and CA3080A types are Gatable-Gain Blocks which utilize the unique operational-transconductanceamplifier (OTA) concept described in Application Note AN6668, “A

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2SK3080   Silicon N Channel MOS FET High Speed Power Switching

2SK3080 Silicon N Channel MOS FET High Speed Power Switching ADE-208-635A (Z) 2nd. Edition May 1998 Features • Low on-resistance R DS(on) = 20 mΩ typ. (V GS = 10V, ID = 15 A) • 4V gate drive devices. • High speed switching Outline TO–220AB D G 1 2 S 3 1. Gate 2. D

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