No | Part number | Description ( Function ) | Manufacturers | |
1 | C5909 | NPN Transistor - 2SC5909 Power Transistors 2SC5909 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features (2.0) • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns • Wide safe operation area 26.5±0.5 (23.4) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45± |
Panasonic |
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Part No | Description ( Function) | Manufacturers | |
2SC5909 | Silicon NPN triple diffusion mesa type Power Transistors 2SC5909 Silicon NPN triple diffusion mesa type For horizontal deflection output 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ ■ Features • High breakdown voltage: VCBO ≥ 1 500 V • High-speed switching: tf < 200 ns • Wide safe operati |
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2N5909 | MONOLITHIC DUAL N CHANNEL JFET GENERAL PURPOSE AMPLIFIER |
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2N5909 | (2N5xxx) JFET N-Channel Metal Can JFET’s Part No. BVGSS Min. (V) VP Min. (V) @ Max. (V) (V) VD S & 2N5432 2N5433 2N5434 25 4.0 3.0 1.0 10.0 Part No. w w 2N3684 2N3686 2N3822 w .D BV GSS Min. (V) 50 50 50 40 35 30 30 30 25 at h S a (V) 2.0 0.6 1.0 2.5 2.5 4.0 2.0 1.0 ee 9.0 4.0 |
Taitron Components |
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2N5909 | Low Leakage 2N5909 LOW NOISE, LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET The 2N5909 is a high-performance monolithic dual JFET featuring tight matching and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications where tight t |
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