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Datasheet C5906 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | C5906 | Silicon NPN Epitaxial Type Transistor TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5906
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SC5906
Unit: mm
• High DC current gain: hFE = 200 to 500 (IC = 0.5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) • High-speed swi |
 Toshiba |
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| 1 | C5906 | Silicon NPN transistor Silicon NPN transistor epitaxial type C5906
C5906
[ Applications ] High voltage, High current
[ Feature ] High voltage VCEO= 170V High current gain charactristic Low collector-emitter saturation voltage VCE(sat)= 0.45V(Max.) at IC/IB= 2A/200mA Fast-switching speed
[ Absolute maximum ratings (Ta= |
 PHENITEC SEMICONDUCTOR |
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