No | Part number | Description ( Function ) | Manufacturers | |
1 | C5886 | NPN Transistor - 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications 2SC5886 Unit: mm · High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) · Low collector-emitter saturation: VCE (sat) = 0.22 V (max) · High-speed switching: tf = 55 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emi |
Toshiba Semiconductor |
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Recommended search results related to C5886 |
Part No | Description ( Function) | Manufacturers | |
2SC5886 | TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5886 High-Speed Swtching Applications DC-DC Converter Applications · · · High DC current gain: hFE = 400 to 1000 (IC = 0.5 A) Low collector-emitter saturation: VCE (sat) = 0.22 V (max) High-speed switching: tf = 55 ns ( |
Toshiba Semiconductor |
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2N5886 | COMPLEMENTARY SILICON HIGH POWER TRANSISTORS ® 2N5886 HIGH CURRENT SILICON NPN POWER TRANSISTOR s s STMicroelectronics PREFERRED SALESTYPE HIGH CURRENT CAPABILITY APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 1 2 TO-3 DESCRIPTION The 2N5886 is a silicon Epitaxial- |
STMicroelectronics |
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2N5886 | POWER TRANSISTORS(25A/200W) A A A A |
Mospec Semiconductor |
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2N5886 | COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS |
Boca Semiconductor Corporation |
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2N5886 | (2N5883 - 2N5886) Complementary Silicon High-Power Transistors 2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High−Power Transistors Complementary silicon high−power transistors are designed for general−purpose power amplifier and switching applications. Fea |
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