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Datasheet C536 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | C536 | NPN Transistor - 2SC536 2SC536
2SC536
FEATURES Power dissipation PCM:
TRANSISTOR (NPN)
TO-92
1. EMITTER
400 mW (Tamb=25℃)
2. COLLECTOR 3. BASE 1 2 3
Collector current ICM: 100 mA Collector-base voltage V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERI |
 WEJ |
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| 3 | C536 | NPN Silicon Epitaxial Planar Transistor 2SC536
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain.
On special request, these transistors can be manufactured in different pin configurations.
1. Emitter 2. Co |
 Bluecolour |
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| 2 | C5360 | NPN Transistor - 2SC5360 TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5360
Color TV Chroma Output Applications
2SC5360
Unit: mm
• High voltage: VCEO = 300 V • Small collector output capacitance: Cob = 5.0 pF (typ.) • High transition frequency: fT = 100 MHz (typ.)
Maximum Ratings (Tc = 25°C)
Characterist |
 Toshiba Semiconductor |
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| 1 | C5368 | NPN Transistor - 2SC5368 2SC5368
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5368
High-Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
Unit: mm
• • •
High speed: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.8 A) High breakdown voltage: VCEO = 450 V High DC c |
Toshiba Semiconductor |
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