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C517 PDF Datasheet

The C517 is NPN Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
6 C517
NPN Transistor

ETC
ETC
pdf
5 C5171
NPN Transistor - 2SC5171

2SC5171 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5171 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm • • High transition frequency: fT = 200 MHz (typ.) Complementary to 2SA1930 Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Colle

Toshiba Semiconductor
Toshiba Semiconductor
pdf
4 C5174
Silicon NPN Epitaxial Type Transistor

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5174 Power Amplifier Applications Driver Stage Amplifier Applications 2SC5174 Unit: mm • High transition frequency: fT = 100 MHz (typ.) • Complementary to 2SA1932 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-

Toshiba Semiconductor
Toshiba Semiconductor
pdf
3 C5176
NPN Transistor - 2SC5176

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC5176 High-Current Switching Applications DC-DC Converter Applications 2SC5176 Unit: mm • Low collector saturation voltage: VCE (sat) = 0.4 V (max) (IC = 3 A) • High-speed switching: tstg = 1.0 μs (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Coll

Toshiba
Toshiba
pdf
2 C5177
NPN Transistor - 2SC5177

DATA SHEET SILICON TRANSISTOR 2SC5177 NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES • Low Current Consumption and High Gain |S21e|2 = 9.0 dB TYP. @ VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz 0.4 –0.05 +0.1 PACKAGE DIMENSIONS (Units: mm) 2.8±0.2 1.5 0.65 –0.15 +0.1 �

NEC
NEC
pdf
1 C517A
8-Bit CMOS Microcontroller

Microcomputer Components 8-Bit CMOS Microcontroller C517A Data Sheet 10.97 C517A Data Sheet Revision History: Previous Version: Page Page (in previous (in current Version) Version) Current Version: 10.97 none Subjects (major changes since last revision) Edition 10.97 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikatio

Siemens Semiconductor
Siemens Semiconductor
pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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