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Datasheet C5036 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | C5036 | 50A AVALANCHE AUTOMOTIVE CELL DIODE ®
WON-TOP ELECTRONICS
Features
Diffused Junction Low Leakage Low Cost High Surge Current Capability Die Size 220 mil HEX
C5020, C5024, C5036
50A AVALANCHE AUTOMOTIVE CELL DIODE
Pb
D
Anode +
C E
Mechanical Data
B
C50
Case: Cell Diode Passivated with Silicon Rubber Te |
 Won-Top Electronics |
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| 1 | C5036 | NPN Transistor - 2SC5036 Power Transistors
2SC5036, 2SC5036A
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
s Features
q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO) q Satisfactory linearity of foward current transfer ratio hFE q F |
 Panasonic Semiconductor |
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