No | Part number | Description ( Function ) | Manufacturers | |
1 | C4213 | NPN Transistor - 2SC4213 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 2SC4213 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA) • High DC current gain: hFE = 200~1200 • Small package Absolute Maxim |
Toshiba |
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Recommended search results related to C4213 |
Part No | Description ( Function) | Manufacturers | |
2SC4213 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 2SC4213 For Muting and Switching Applications Unit: mm • High emitter-base voltage: VEBO = 25 V (min) • High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA) • Low on resistance: RON = |
Toshiba Semiconductor |
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2SC4213 | Silicon NPN Epitaxial SMD Type Silicon NPN Epitaxial 2SC4213 Features High emitter-base voltage: VEBO = 25 V (min). High reverse hFE: Reverse hFE = 150 (typ.) (VCE = -2 V, IC = -4 mA). Low on resistance: RON = 1Ù (typ.) (IB = 5 mA). High DC current gain: hFE = 200 1200. Small package. Transistors IC |
Kexin |
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CSC4213 | CSC4213
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HWCAT |
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GC4213 | HIGH SPEED PIN DIODES TOC Control Devices HIGH SPEED PIN DIODES DESCRIPTION The GC4200 series are high speed (cathode base) PIN diodes made with high resistivity epitaxial silicon material. These diodes are passivated with silicon dioxide for high stability and reliability and have been proven by tho |
Microsemi Corporation |
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LTC4213 | Electronic Circuit Breaker LTC4213 No RSENSE™ Electronic Circuit Breaker DESCRIPTIO U 2µs/DIV 4213 TA01b FEATURES ■ ■ ■ ■ ■ ■ ■ ■ ■ Fast 1µs Response Circuit Breaker 3 Selectable Circuit Breaker Thresholds No Sense Resistor Required Dual Level Overcurrent Fault |
Linear Technology |
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ON Semiconductor |
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