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C4115E PDF Datasheet

The C4115E is NPN Transistor - 2sc4115e. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 C4115E
NPN Transistor - 2SC4115E

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors 2SC4115E TRANSISTOR C WBFBP-03A (1.6×1.6×0.5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A/0.1A) APPLICATION Excellent current gain characteristics For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-R

Jiangsu Changjiang Electronics
Jiangsu Changjiang Electronics
pdf

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Recommended search results related to C4115E

Part No Description ( Function) Manufacturers PDF
2SC4115   Transistor

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR (NPN) SOT-89 1. BASE FEATURES z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) z Excellent current gain characteristics. z Complements t

Jiangsu
Jiangsu
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2SC4115   Transistor

SMD Type Low Frequency Transistor 2SC4115 Transistors Features Low VCE(sat):VCE(sat) = 0.2V (Typ.) IC / IB = 2A / 0.1A NPN silicon transistor Absolute Maximum Ratings Ta = 25 Parameter collector-base voltage collector-emitter voltage emitter-base voltage co

Kexin
Kexin
datasheet pdf
2SC4115E   TRANSISTOR

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03A Plastic-Encapsulate Transistors 2SC4115E TRANSISTOR C WBFBP-03A (1.6×1.6×0.5) unit: mm DESCRIPTION NPN Epitaxial planar Silicon Transistor FEATURES Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC/IB = 2A

Jiangsu Changjiang Electronics
Jiangsu Changjiang Electronics
datasheet pdf
2SC4115S   Low Frequency Transistor(20V/ 3A)

Transistors Low Frequency Transistor (20V, 3A) 2SD2150 / 2SC4115S / 2SD2264 FFeatures 1) Low VCE(sat). VCE(sat) = 0.2V (Typ.) (IC / IB = 2A / 0.1A) 2) Excellent current gain characteristics. 3) Complements the 2SB1424 / 2SA1585S. FStructure Epitaxial planar type NPN silicon tran

ROHM Semiconductor
ROHM Semiconductor
datasheet pdf
C4115   NPN Transistor - 2SC4115

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SC4115 TRANSISTOR (NPN) SOT-89 1. BASE FEATURES z Low VCE(sat).VCE(sat) = 0.2V (Typ.)(IC / IB = 2A / 0.1A) z Excellent current gain characteristics. z Complements t

Jiangsu
Jiangsu
datasheet pdf

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