|
|
Datasheet C3279 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | C3279 | NPN silicon ·ç¹âÐÀ¼¼Êõ×ÊÁÏ
■■ APPLICATION：POWER AMPLIFIER APPLICATION、 SWITCHING APPLICATION. ■■MAXIMUM RATINGS （Ta＝25℃） PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Te |
 FGX |
 |
| 1 | C3279 | NPN Transistor - 2SC3279 2SC3279
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3279
Strobe Flash Applications Medium Power Amplifier Applications
· High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = 1 V, IC = 0.5 A) : hFE (2) = 70 (min), 200 (typ.) (VCE = 1 V, IC = 2 A) · Low sat |
 Toshiba Semiconductor |
|
| Esta página es del resultado de búsqueda del C3279. Si pulsa el resultado de búsqueda de C3279 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Enlace url :
[1]
nuevas actualizaciones
| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
 Sanken |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Sitemap |