No | Part number | Description ( Function ) | Manufacturers | |
1 | C3267 | NPN Transistor - 2SC3267 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3267 Power Amplifier Applications Power Switching Applications 2SC3267 Unit: mm · Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A · Complementary to 2SA1297 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base curren |
Toshiba Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
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2SC3267 | Silicon NPN Epitaxial Type TRANSISTOR TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3267 Power Amplifier Applications Power Switching Applications 2SC3267 Unit: mm · Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A · Complementary to 2SA1297 Maximum Ratings (Ta = 25°C) Characteristics |
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Advantest-R3267 | Spectrum Analyzers Operation Manual Cover R3267 Series Spectrum Analyzer Operation Manual (Vol.1) MANUAL NUMBER FOE-8335033H00 Applicable models R3264 R3267 R3273 C 1998 ADVANTEST CORPORATION All rights reserved. First printing October 1, 1998 Printed in Japan Free Datasheet http:/// Safety Su |
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