No | Part number | Description ( Function ) | Manufacturers | |
1 | C3152 | NPN Transistor - 2SC3152 Ordering number:EN1071D NPN Triple Diffused Planar Silicon Transistor 2SC3152 800V/3A Switching Regulator Applications Features · High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3152] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitt |
Sanyo |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to C3152 |
Part No | Description ( Function) | Manufacturers | |
2SC3152 | NPN Triple Diffused Planar Silicon Transistor Ordering number:EN1071D NPN Triple Diffused Planar Silicon Transistor 2SC3152 800V/3A Switching Regulator Applications Features · High breakdown voltage (VCBO≥900V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3152] Specifications Absolute M |
Sanyo Semicon Device |
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2SC3152 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3152 DESCRIPTION ·With TO-3PN package ·High breakdown voltage (VCBO 900V) ·Fast switching speed ·Wide ASO Safe Operating Area APPLICATIONS ·800V/3A Switching Regulator Appli |
SavantIC |
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LPC3152 | (LPC3152 / LPC3154) ARM926EJ microcontrollers LPC3152/3154 ARM926EJ microcontrollers with USB High-speed OTG, SD/MMC, NAND flash controller, and audio codec Rev. 1 — 31 May 2012 Product data sheet 1. General description The NXP LPC3152/3154 combine an 180 MHz ARM926EJ-S CPU core, High-speed USB 2.0 OTG, 192 kB SRAM, NAND |
NXP Semiconductors |
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2SK3152 | Silicon N Channel MOS FET High Speed Power Switching 2SK3152 Silicon N Channel MOS FET High Speed Power Switching ADE-208-732 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 1 2 S 1. Gate |
Hitachi Semiconductor |
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2SK3152 | Silicon N Channel MOS FET 2SK3152 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1077-0200 (Previous: ADE-208-732) Rev.2.00 Sep 07, 2005 RENESAS Package |
Renesas |
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Vishay |
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ON Semiconductor |
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