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C3147 PDF Datasheet

The C3147 is SilICon NPN Power Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 C3147
Silicon NPN POWER TRANSISTOR

HG Semiconductors 2sc3147HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and conditions are subject to change www.HGSemi.com Sep. 1998

HGSemi
HGSemi
pdf

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Recommended search results related to C3147

Part No Description ( Function) Manufacturers PDF
2SC3147   NPN EPITAXIAL (VHF BAND POWER AMPLIFIER APPLICATIONS)

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
2SC3147   Silicon NPN POWER TRANSISTOR

HG Semiconductors 2sc3147HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR Note : Above parameters , ratings , limits and conditions are subject to change www.HGSemi.com Sep. 1998

HGSemi
HGSemi
datasheet pdf
2SK3147   Silicon N Channel MOS FET High Speed Power Switching

2SK3147(L),2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-731 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline DPAK–2 4 4 D 2

Hitachi Semiconductor
Hitachi Semiconductor
datasheet pdf
2SK3147L   Silicon N Channel MOS FET High Speed Power Switching

2SK3147(L),2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-731 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline DPAK–2 4 4 D 2

Hitachi Semiconductor
Hitachi Semiconductor
datasheet pdf
2SK3147S   Silicon N Channel MOS FET High Speed Power Switching

2SK3147(L),2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-731 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 0.1 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline DPAK–2 4 4 D 2

Hitachi Semiconductor
Hitachi Semiconductor
datasheet pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
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LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
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 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

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