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Datasheet C2669 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
1 | C2669 | NPN Transistor - 2SC2669 2SC2669
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2669
High Frequency Amplifier Applications
Unit: mm
· High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) · Recommended for FM IF, OSC stage and AM CONV, IF stage.
Maximum Ratings (Ta = 25°C)
Characteristics
Collecto |
Toshiba Semiconductor |
C2 Datasheet ( Hoja de datos ) - resultados coincidentes |
Número de pieza | Descripción | Fabricantes | |
C2073 | NPN Transistor - 2SC2073 |
ETC |
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C2383 | 160V, 1A, NPN Transistor, 2SC2383 |
Toshiba Semiconductor |
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C2482 | NPN Transistor - 2SC2482 |
Toshiba Semiconductor |
Esta página es del resultado de búsqueda del C2669. Si pulsa el resultado de búsqueda de C2669 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
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