pdf datasheet site - dataSheet39.com

C229E PDF Datasheet

The C229E is SilICon Controlled Rectifier. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




Notice


Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
1 C229E
SILICON CONTROLLED RECTIFIER

C228, C22803, C229 SERIES High-reliability discrete products and engineering services since 1977 SILICON CONTROLLED RECTIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rat

Digitron Semiconductors
Digitron Semiconductors
pdf

0    1    2    3    4    5    6    7    8   9  

  A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q    R    S   

 T    U    V    W    X    Y    Z    ALL


Recommended search results related to C229E

Part No Description ( Function) Manufacturers PDF
2SC2290   Silicon NPN Epitaxial Planar Type Transistor

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 60WPEP (Min.) l Power Gain : Gp = 11.8dB (Min.) l Collector Efficie

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
2SC2290   Silicon NPN POWER TRANSISTOR

HG Semiconductors HG RF POWER TRANSISTOR 2SC2290 ROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W PEP (Min.) Power Gain : Gp = 11.8dB (Min.) Collector Efficiency ηC: = 35% (Min.) Intermodulation Distortion : IMD

HGSemi
HGSemi
datasheet pdf
2SC2290A   SSB LINEAR POWER AMPLIFIER APPLICATIONS

2SC2290A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290A 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm z z z z z Specified 12.5V, 28MHz Characteristics Output Power Power Gain Collector Efficiency : Po = 60WPEP (Min.) : Gp = 11

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
2SC2292   (2SCxxxx) Power Transistors

Aristo-Craft
Aristo-Craft
datasheet pdf
2SC2292   SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2292 DESCRIPTION ·With TO-3 package ·High speed ,high voltage APPLICATIONS ·For high speed ,high voltage switching and DC-DC converter application PINNING (See Fig.2) PIN 1 2

SavantIC
SavantIC
datasheet pdf

[1]    

List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


Share Link


DataSheet39.com offers a large amount of data sheet, You can free PDF files download.
Our site offers extensive datasheets for various electronic components including semiconductors, resistors, capacitors, connectors and more.


Sitemap Link

Index :     1N    2SC    74H    AD    BC    IRF    

  LM    TD    New    Sitemap    C22



DataSheet39.com     |   2020    |

  Privacy Policy   |   Contact Us