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Datasheet C2120 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | C2120 | NPN Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
2SC2120 TRANSISTOR (NPN)
FEATURES z High DC Current Gain z Complementary to 2SA950
TO – 92
1. EMITTER 2. COLLECTOR 3. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJ |
 JIANGSU CHANGJIANG |
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| 9 | C2120 | Silicon NPN Epitaxial Type Transistor 1112SC2120
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC2120
Audio Power Amplifier Applications
Unit: mm
• High hFE: hFE (1) = 100~320 • 1 watts amplifier applications. • Complementary to 2SA950
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collecto |
 Toshiba Semiconductor |
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| 8 | C2120 | NPN Plastic Encapsulated Transistor Elektronische Bauelemente
2SC2120
0.8 A , 35 V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain Complementary to 2SA950
CLASSIFICATION OF hFE
Product-Rank 2SC2120-O
Range
100~200
2SC2120-Y 160~320
TO-9 |
 SeCoS |
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| 7 | C2120 | Silicon NPN Transistor INCHANGE Semiconductor
isc Silicon NPN Transistor
isc Product Specification
2SC2120
DESCRIPTION ·High hFE(1)=100-320 ·1 Watts Amplifier Applications ·Complement to Type 2SA950
APPLICATIONS ·Audio power amplifier Applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collecto |
 INCHANGE |
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| Número de pieza | Descripción | Fabricantes | |
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