No | Part number | Description ( Function ) | Manufacturers | |
1 | C1941 | NPN Transistor - 2SC1941 |
NEC |
0  1  2  3  4  5  6  7  8 9 |
Recommended search results related to C1941 |
Part No | Description ( Function) | Manufacturers | |
2SC1941 | NPN SILICON TRANSISTOR |
NEC |
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2SA1941 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1941 Power Amplifier Applications 2SA1941 Unit: mm • High breakdown voltage: VCEO = −140 V (min) • Complementary to 2SC5198 • Recommended for 70-W high-fidelity audio frequency amplifier output stage. Absolute Maxi |
Toshiba Semiconductor |
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2SA1941 | PNP Epitaxial Silicon Transistor PNP Silicon PNP Epitaxial Transistor R 2SA1941 VCEO=-140V (min) 2SC5198 70W RoHS APPLICATIONS Power Amplifier Applications FEATURES High collector voltage VCEO=140V (min) Complementary to 2SC5198 Recommended for 70-W high-fidelity audio frequency amplifier output RoHS product |
JILIN SINO |
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2SA1941 | SILICON POWER TRANSISTOR SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SA1941 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5198 APPLICATIONS ·Power amplifier applications ·Recommend for 70W high fidelity audio frequency amplifier outp |
SavantIC |
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2SA1941 | POWER TRANSISTOR www.DataSheet4U.net INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1941 DESCRIPTION ·Low Collector Saturation Voltage: VCE(sat)=- 2.0V(Min) @IC=- 7A ·Good Linearity of hFE ·Complement to Type 2SC5198 APPLICATIONS ·Power amplifier app |
Inchange Semiconductor |
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