Datasheet BZX79C6V2 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BZX79C6V2	Zener Diode Small Signal Product BZX79C2V0 thru BZX79C75 Taiwan Semiconductor 5% Tolerance Zener Diode FEATURES - Wide zener voltage range selection: 2.0V to 75V - VZ Tolerance selection of ±5% - Designed for through-hole device type mounting - Hermetically sealed glasss - Pb free and RoHS compliant - High	Taiwan Semiconductor	diode
2	BZX79C6V2	Zener Diode Small Signal Product BZX79C2V0 thru BZX79C75 Taiwan Semiconductor 5% Tolerance Zener Diode FEATURES - Wide zener voltage range selection: 2.0V to 75V - VZ Tolerance selection of ±5% - Designed for through-hole device type mounting - Hermetically sealed glasss - Pb free and RoHS compliant - High	Taiwan Semiconductor	diode
3	BZX79C6V2	Series Half Watt Zeners	Fairchild Semiconductor	data
4	BZX79C6V2	Zener Diode, Rectifier BZX79C 3V3 - BZX79C 33 Series Discrete POWER & Signal Technologies BZX79C 3V3 - 33 Series Half Watt Zeners Absolute Maximum Ratings* Parameter Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature (1/16” from case for 10 seconds) Total Device Dissipation Derate above	Fairchild Semiconductor	data
5	BZX79C6V2	VOLTAGE REGULATOR DIODE BZX79C Series MECHANICAL DATA Dimensions in mm(inches) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) 3 2 1 1.91 ± 0.10 (0.075 ± 0.004) 3.05 ± 0.13 (0.12 ± 0.005) A= 0.76 ± 0.15 (0.03 ± 0.006) VOLTAGE REGULATOR DIODE IN A CERAMIC SURFACE MOUNT PACKAGE FOR HI–REL APPLICATIONS A 1.40 (0	Seme LAB	diode
6	BZX79C6V2	SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON GLASS PASSIVATED 0.5WATT ZENER DIODES BZX79C 2V4 to 51V DO-35 500mW These Zeners Are Best Suited for Industrial Purpose, Military & Space Applications when Hermetcally Sealed in Glass with Double St	CDIL	diode
7	BZX79C6V2	Diode Zener Single 6.2V 5% 500mW 2-Pin ALF	New Jersey Semiconductor	diode
8	BZX79C6V2RL	500 mW DO-35 Glass Zener Voltage Regulator Diodes MOTOROLA SEMICONDUCTOR TECHNICAL DATA 500 mW DO-35 Glass Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP GENERAL DATA 500 mW DO-35 GLASS GLASS ZENER DIODES 500 MILLIWATTS 1.8–200 VOLTS 500 Milliwatt Hermetically Sealed Glass Silicon Zener Diodes Specification	Motorola Inc	diode

BZX Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BZX10	Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju	COS	diode
2	BZX10	Zener Diode w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w	COS	diode
3	BZX11	Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju	COS	diode
4	BZX11	Zener Diode w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w	COS	diode
5	BZX12	Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju	COS	diode
6	BZX12	Zener Diode w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w	COS	diode
7	BZX13	Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju	COS	diode
8	BZX13	Zener Diode w w w Low reverse current level Very high stability Low noise 0.5Max Available with tighter tolerances CATHODE MARK Applications Voltage stabilization T j =25 C Parameter Power dissipation Junction temperature Storage temperature range Symbol P Tj Value TStg Marking Example: COS 6V8 w w	COS	diode
9	BZX15	Zener Diode ZENER DIODE SILICON EPITAXIAL PLANAR TYPE Unit in: mm 2.0Max 0.5Max 26.0Min CATHODE MARK Features: Very sharp reverse characteristic Low reverse current level Very high stability Low noise Available with tighter tolerances Applications Voltage stabilization T j =25C Parameter Power dissipation Ju	COS	diode

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Número de pieza	Descripción	Fabricantes	PDF
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