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Datasheet BYW29-200 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BYW29-200 | Ultrafast Rectifier, Diode Ultrafast Rectifier
INCHANGE Semiconductor
BYW29-200
FEATURES ·High surge capacity ·Low Forward Voltage ·Low Leakage Current ·150℃ Operating Junction Temperature ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power | Inchange Semiconductor | rectifier |
2 | BYW29-200 | Rectifier diodes ultrafast Philips Semiconductors
Product specification
Rectifier diodes ultrafast
GENERAL DESCRIPTION
Glass passivated high efficiency rectifier diodes in a plastic envelope, featuring low forward voltage drop, ultra-fast recovery times and soft recovery characteristic. They are intended for use in switched | NXP Semiconductors | rectifier |
3 | BYW29-200 | HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES ®
BYW29(F)
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED VERSION (ISOWATT220AC) : Insulating voltage = 2000 V DC Capacitance = 12 pF
A K K A
DESC | STMicroelectronics | rectifier |
4 | BYW29-200 | RECTIFIERS | Microsemi Corporation | rectifier |
5 | BYW29-200 | FAST EFFICIENT PLASTIC RECTIFIER BYW29-50 THRU BYW29-200
FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 200 Volts
TO-220AC
0.185 (4.70) 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) DIA. 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.175 (4.44)
Forward Current - 8.0 Amperes
FEATURES
♦ Plastic package has Underwri | General Semiconductor | rectifier |
BYW Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BYW100 | HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE ®
BYW100-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 1.5 A 200 V 150 °C 0.85 V
FEATURES AND BENEFITS VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES THE SPECIFICATIONS AND CURVES ENABL STMicroelectronics rectifier | | |
2 | BYW100-200 | HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE ®
BYW100-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 1.5 A 200 V 150 °C 0.85 V
FEATURES AND BENEFITS VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES THE SPECIFICATIONS AND CURVES ENABL STMicroelectronics rectifier | | |
3 | BYW100200 | HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE ®
BYW100-200
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 1.5 A 200 V 150 °C 0.85 V
FEATURES AND BENEFITS VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES THE SPECIFICATIONS AND CURVES ENABL STMicroelectronics rectifier | | |
4 | BYW178 | Very Fast Silicon Mesa Rectifier BYW178
Vishay Telefunken
Very Fast Silicon Mesa Rectifier
Features
D D D D D D
Glass passivated junction Hermetically sealed package Low reverse current Soft recovery characteristics Very fast reverse recovery time Low reverse recovery peak current
Applications
Ultra fast rectifier for switching m Vishay Telefunken rectifier | | |
5 | BYW27-100 | Standard silicon rectifier diodes BYW 27-50...BYW 27-1000
Axial lead diode
Standard silicon rectifier diodes
BYW 27-50...BYW 27-1000 Forward Current: 1 A Reverse Voltage: 50 to 1000 V
Features
!"#$
Mechanical Data
%&$"' ( %&$") *
+ Semikron rectifier | | |
6 | BYW27-100 | SILICON RECTIFIER DIODES BYW27-50 - BYW27-1000
PRV : 50 - 1000 Volts Io : 1.0 Amperes
FEATURES :
* High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic * Epoxy : UL94V-O rate flame retardan SYNSEMI rectifier | | |
7 | BYW27-100 | SILICON RECTIFIERS BYW27-50 - BYW27-1000 SILICON RECTIFIERS
PRV : 50 - 1000 Volts Io : 1.0 Amperes
FEATURES :
* * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop
0.107 (2.7) 0.080 (2.0) 1.00 (25.4) MIN.
DO - 41
0.205 (5.2) 0.166 (4.2)
MECHANI EIC discrete Semiconductors rectifier | |
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