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Datasheet BUZ31 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 13 | BUZ31 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 31
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 31
VDS
200 V
ID
14.5 A
RDS(on)
0.2 Ω
Package TO-220 AB
Ordering Code C67078-S.1304-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 14.5 Unit A
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 Siemens Semiconductor Group |
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| 12 | BUZ31 | SIPMOS Power Transistor BUZ 31
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 31
200 V
14.5 A
0.2 Ω
TO-220 AB
C67078-S.1304-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current |
 Infineon Technologies AG |
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| 11 | BUZ31 | Power MOS Transistors SEMICONDUCTORS
BUZ31 POWER MOS TRANSISTORS
FEATURE
• • • • • Nchannel Enhancement mode Avalanche-rated TO-220 envelope Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VDS IDS IDM IAR EAR EAS VGS RDS(on) PT tJ tstg
Ratings
http://www.DataSheet4U.net/
Value
200 14.5 58 14.5 9 200 20 |
 Comset Semiconductors |
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| 10 | BUZ31 | Trans MOSFET N-CH 200V 14.5A 3-Pin(3+Tab) TO-220 |
 New Jersey Semiconductor |
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| Número de pieza | Descripción | Fabricantes | |
| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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