BUZ21SMD PDF Datasheet

BUZ 21 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 21 VDS 100 V ID 21 A RDS(on) 0.085 Ω Package TO-220 AB Ordering Code C67078-S1308-A2 Maximum Ratings Parameter Continuous drain current Symbol V

BUZ21 Semiconductor Data Sheet October 1998 File Number 2420.1 19A, 100V, 0.100 Ohm, N-Channel Power MOSFET Features • 19A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.100Ω (BUZ21) field effect transistor designed for applicat

SIPMOS ® Power Transistor BUZ 21 • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) Package Ordering Code BUZ 21 100 V 21 A 0.085 Ω TO-220 AB C67078-S1308-A2 Maximum Ratings Parameter Symbol Values Unit Cont

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification BUZ211 DESCRIPTION ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) ·SOA is Power Dissipation Limited APPLICATIONS designed for applications such as switching regulators, switching conve