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Datasheet BUZ20 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
8 | BUZ20 | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 20
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 20
VDS
100 V
ID
13.5 A
RDS(on)
0.2 Ω
Package TO-220 AB
Ordering Code C67078-S1302-A2
Maximum Ratings Parameter Continuous drain current Symbol Values 13.5 Unit A
I |
Siemens Semiconductor Group |
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7 | BUZ20 | 12A/ 100V/ 0.200 Ohm/ N-Channel Power MOSFET BUZ20
Semiconductor
Data Sheet
October 1998
File Number 2254.1
12A, 100V, 0.200 Ohm, N-Channel Power MOSFET
Features
• 12A, 100V
[ /Title This is an N-Channel enhancement mode silicon gate power • rDS(ON) = 0.200Ω (BUZ20 field effect transistor designed for applications such as • SOA |
Intersil Corporation |
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6 | BUZ20 | SIPMOS Power Transistor SIPMOS ® Power Transistor
BUZ 20
• N channel • Enhancement mode • Avalanche-rated
Pin 1
Pin 2
Pin 3
G
D
S
Type
VDS
ID
RDS(on)
Package
Ordering Code
BUZ 20
100 V
13.5 A
0.2 Ω
TO-220 AB
C67078-S1302-A2
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current |
Infineon Technologies AG |
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5 | BUZ201 | main ratings |
Siemens Semiconductor Group |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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