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Datasheet BUZ11A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 3 | BUZ11A | N - CHANNEL 50V - 0.045W - 26A TO-220 STripFET] MOSFET ®
BUZ11A
N - CHANNEL 50V - 0.045Ω - 26A TO-220 STripFET™ MOSFET
T YPE BUZ11A
s s s s s
V DSS 50 V
R DS(on) < 0.055 Ω
ID 26 A
TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
3 1 2
APPLICATIONS HIGH CURRENT |
 STMicroelectronics |
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| 2 | BUZ11A | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) BUZ 11 A
Not for new design
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 11 A
VDS
50 V
ID
26 A
RDS(on)
0.055 Ω
Package TO-220 AB
Ordering Code C67078-S1301-A3
Maximum Ratings Parameter Continuous drain current Symbol |
 Siemens Semiconductor Group |
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| 1 | BUZ11AL | SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level) BUZ 11 AL
Not for new design
SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level
Pin 1 G Type BUZ 11 AL
Pin 2 D
Pin 3 S
VDS
50 V
ID
26 A
RDS(on)
0.055 Ω
Package TO-220 AB
Ordering Code C67078-S1330-A3
Maximum Ratings Parameter Continuous drai |
Siemens Semiconductor Group |
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| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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