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Datasheet BUZ11 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 15 | BUZ11 | N - CHANNEL 50V - 0.03W - 33A TO-220 STripFET] MOSFET ®
BUZ11
N - CHANNEL 50V - 0.03Ω - 33A TO-220 STripFET™ MOSFET
T YPE BUZ 11
s s s s s
V DSS 50 V
R DS(o n) < 0.04 Ω
ID 33 A
TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE
3 1 2
APPLICATIONS HIGH CURRENT, H |
 STMicroelectronics |
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| 14 | BUZ11 | SIPMOS Power Transistorm (N channel Enhancement mode Avalanche-rated) BUZ 11
Not for new design
SIPMOS ® Power Transistor
• N channel • Enhancement mode • Avalanche-rated
Pin 1 G
Pin 2 D
Pin 3 S
Type BUZ 11
VDS
50 V
ID
30 A
RDS(on)
0.04 Ω
Package TO-220 AB
Ordering Code C67078-S1301-A2
Maximum Ratings Parameter Continuous drain current Symbol Valu |
 Siemens Semiconductor Group |
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| 13 | BUZ11 | 30A/ 50V/ 0.040 Ohm/ N-Channel Power MOSFET BUZ11
Data Sheet June 1999 File Number 2253.2
30A, 50V, 0.040 Ohm, N-Channel Power MOSFET
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high |
 Intersil Corporation |
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| 12 | BUZ11 | N-Channel Power MOSFET / Transistor Data Sheet
BUZ11
September 2013 File Number 2253.2
N-Channel Power MOSFET 50V, 30A, 40 mΩ
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for |
 Fairchild Semiconductor |
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