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Datasheet BSN10 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | BSN10 | N-channel enhancement mode vertical D-MOS transistors DISCRETE SEMICONDUCTORS
DATA SHEET
BSN10; BSN10A N-channel enhancement mode vertical D-MOS transistors
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
FEATURES • Dir |  NXP Semiconductors | transistor |
| 2 | BSN10A | N-channel enhancement mode vertical D-MOS transistors DISCRETE SEMICONDUCTORS
DATA SHEET
BSN10; BSN10A N-channel enhancement mode vertical D-MOS transistors
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
FEATURES • Dir | NXP Semiconductors | transistor |
BSN Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | BSN011NE2LS | Power-MOSFET OptiMOSTM Power-MOSFET
Features • Optimized for high performance Buck converter • Very low parasitic inductance • Low profile (<0.5 mm) • Double side cooling • N-channel • 100% avalanche tested • Very low on-resistance R DS(on) @ V GS=4.5 V • Pb-free lead plating; RoHS compliant •  Infineon mosfet | | |
| 2 | BSN012N03LS | Power-MOSFET OptiMOSTM Power-MOSFET
Features • Optimized for high performance Buck converter • Very low parasitic inductance • Low profile (<0.5 mm) • Double side cooling • N-channel • 100% avalanche tested • Very low on-resistance R DS(on) @ V GS=4.5 V • Pb-free lead plating; RoHS compliant • Infineon mosfet | | |
| 3 | BSN012N03LSI | Power-MOSFET OptiMOSTM Power-MOSFET
Features • Optimized for high performance Buck converter • Monolithic integrated Schottky like diode • Very low on-resistance R DS(on) @ V GS=4.5 V • 100% avalanche tested • N-channel • Qualified according to JEDEC1) for target applications • Pb-free lead plating Infineon mosfet | | |
| 4 | BSN045NE2LS | Power-MOSFET BSN045NE2LS
OptiMOSTM Power-MOSFET
Features • Optimized for high performance Buck converter • Very low parasitic inductance • Low profile (<0.5 mm) • Double side cooling • N-channel
Product Summary VDS RDS(on),max ID QOSS QG(0V..10V)
25 V 4.5 mW 50 A 7.6 nC 11 nC
• 100% avalanche tes Infineon mosfet | | |
| 5 | BSN048N03LS | Power-MOSFET OptiMOSTM Power-MOSFET
Features • Optimized for high performance Buck converter • Very low parasitic inductance • Low profile (<0.5 mm) • Double side cooling • N-channel • 100% avalanche tested • Very low on-resistance R DS(on) @ V GS=4.5 V • Pb-free lead plating; RoHS compliant • Infineon mosfet | | |
| 6 | BSN10 | N-channel enhancement mode vertical D-MOS transistors DISCRETE SEMICONDUCTORS
DATA SHEET
BSN10; BSN10A N-channel enhancement mode vertical D-MOS transistors
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
FEATURES • Dir NXP Semiconductors transistor | | |
| 7 | BSN10A | N-channel enhancement mode vertical D-MOS transistors DISCRETE SEMICONDUCTORS
DATA SHEET
BSN10; BSN10A N-channel enhancement mode vertical D-MOS transistors
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS transistors
FEATURES • Dir NXP Semiconductors transistor | |
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