No | Part number | Description ( Function ) | Manufacturers | |
1 | BLW75 | NPN SILICON RF POWER TRANSISTOR BLW75 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI BLW75 is Designed for 25V Large-Signal Amplifier Applications, TV Transposers, and Transmitters Operating in Band lll. PACKAGE STYLE .380" 4L STUD (MOD STUD) MAXIMUM RATINGS IC VCE VCB PDISS TJ TSTG θJC O O 4.0 A 32 V 60 V 60 W @ TC = 25 C -65 C to +200 C -65 C to +125 C 1.9 C/W O O O O 1 = COLLECTOR 2 & 4 = EMIT |
Advanced Semiconductor |
0  1  2  3  4  5  6  7  8 9 |
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0805CS-751E | WIRE-WOUND CHIP INDUCTOR 1. Part Description 1.1 Part Numbering (Example) ( Ex. ) 0805 C S - 120 E J T S SIZE. 0402 1.0 * 0.5 mm 0603 1.6 * 0.8 mm 0805 2.0 * 1.2 mm 1008 2.5 * 2.0 mm 1206 3.2 * 1.6 mm 1210 3.2 * 2.5 mm SHAPE. C : C SHAPE H : H SHAPE M : MOLDING PROFILE. S: STANDARD T: LOW PROFILE Q:H |
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1-770875-1 | Header Connector Free Datasheet http://www.datasheetlist.com/ |
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1.5CE75A | UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS 1.5CE6.8A THRU 1.5CE440A 1.5CE6.8CA THRU 1.5CE440CA UNI-DIRECTIONAL AND BI-DIRECTIONAL SILICON TRANSIENT VOLTAGE SUPPRESSORS 1500 WATTS, 6.8 THRU 440 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 1.5CE6.8A (UniDirectional) and 1.5CE6.8CA (Bi- |
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Vishay |
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ON Semiconductor |
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