No | Part number | Description ( Function ) | Manufacturers | |
2 | BLV92 | UHF power transistor DISCRETE SEMICONDUCTORS DATA SHEET BLV92 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz communications band. FEATURES BLV92 • multi-base structure and emitter-ballasting r |
NXP Semiconductors |
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1 | BLV920 | UHF power transistor DISCRETE SEMICONDUCTORS DATA SHEET M3D076 BLV920 UHF power transistor Product specification Supersedes data of 1995 Apr 10 1997 Nov 17 Philips Semiconductors Product specification UHF power transistor FEATURES • Internal input matching to achieve high power gain and easy design of wideband circuits • Emitter ballasting resistors for an optimum temperature profile � |
NXP Semiconductors |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |