No | Part number | Description ( Function ) | Manufacturers | |
2 | BLM9435 | P-Channel Enhancement Mode Power MOSFET BLM9435 P-Channel Enhancement Mode MOSFET FEATURES VDS VGS -30V ±20V RDSon TYP 51mR@-10V 68mR@-4V5 ID -5.4A DESCRIPTION This device is produced with high cell density, DMOS trench technology, which is especially used to minimize on-state resistance. This device is particularly suited for low voltage application such as portable equipment, power management and other b |
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1 | BLM9435A | P-Channel Enhancement Mode Power MOSFET Pb Free Product BLM9435A P-Channel Enhancement Mode Power MOSFET DESCRIPTION The BLM9435A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -5.3A RDS(ON) < 100mΩ @ VGS=-4.5V RDS(ON) < 52m� |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |