| No | Part number | Description ( Function ) | Manufacturers | |
| 3 | BLM8205 | N-Channel Enhancement Mode Power MOSFET Pb Free Product BLM8205 N-Channel Enhancement Mode Power MOSFET Description The BLM8205 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 19.5V,ID = 4A RDS(ON) <37mΩ @ VGS=2.5V RDS( |
 BELLING |
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| 2 | BLM8205A | N-Channel Enhancement Mode Power MOSFET Pb Free Product BLM8205A N-Channel Enhancement Mode Power MOSFET Description The BLM8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 19.5V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V R |
BELLING |
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| 1 | BLM8205B | N-Channel Enhancement Mode Power MOSFET Pb Free Product BLM8205B N-Channel Enhancement Mode Power MOSFET Description The BLM8205B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID = 6A Typ.RDS(ON) = 16mΩ @ VGS=4.5V |
BELLING |
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List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
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| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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